The system is intended for the substrate temperature and layers thickness monitoring during growth/etching processes.

The work of the system is based on the novell principles of the tandem low-coherenr interferometry. The system allows the in situ monitoring of the technological processes parameters (substrate temperature and layers thickness) with high resolution and unique capability.

It is the only one system in the world, that allows to control the layer thickness at the beginning of the growth without resolution loss.

The systems parameters:

• Absolute accuracy of the temperature measurement 1 K;
• Resolution of the substrate/layers thickness change 1 nm.

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